FORMATION OF HIGH-QUALITY OXIDE NITRIDE STACKED LAYERS ON RUGGED POLYSILICON ELECTRODES BY RAPID THERMAL-OXIDATION

被引：2

作者：

ITOH, S ^{[1
]}

LO, GQ ^{[1
]}

KWONG, DL ^{[1
]}

MATHEWS, VK ^{[1
]}

FAZAN, PC ^{[1
]}

机构：

[1] MICRON TECHNOL INC,BOISE,ID 83708

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/16.214749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief demonstrates that the use of rapid thermal oxidation (RTO) of thin Si3N, films deposited on rugged poly-Si electrodes greatly improves reliability of the films, compared to conventional wet (steam) oxidation. Superior TDDB characteristics and suppression of capacitance loss during high-field stress have been achieved by RTO.

引用

页码：1176 / 1178

页数：3

共 16 条

[1]

BIBYK SB, 1987, P S SIL NITR SIL DIO, P10

[2] TRAPPING, CONDUCTION, AND DIELECTRIC-BREAKDOWN IN SI3N4 FILMS ON AS-DEPOSITED RUGGED POLYSILICON [J].