RAPID THERMAL-OXIDATION OF THIN NITRIDE OXIDE STACKED LAYER

[1] CONDUCTION AND CHARGE TRAPPING IN POLYSILICON-SILICON NITRIDE-OXIDE-SILICON STRUCTURES UNDER POSITIVE GATE BIAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 459 - 467

[2] CHANG CY, 1985, IEEE ELECTRON DEVICE, V6, P488

[3] THERMAL-OXIDATION RATE OF A SI3N4 FILM AND ITS MASKING EFFECT AGAINST OXIDATION OF SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 1049 - 1058

[4] KIM SC, 1986, EL SOC EXT ABSTR, V86, P625

[5] LIOU FT, 1984, IEEE T ELECTRON DEV, V31, P1736, DOI 10.1109/T-ED.1984.21780

[6] CHARGE TRANSPORT AND TRAPPING IN SILICON NITRIDE SILICON DIOXIDE DIELECTRIC DOUBLE-LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4300 - 4306

[7] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 996 - 1003

[8] STUDY OF CARRIER TRAPPING IN STACKED DIELECTRICS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) : 486 - 489

[9] CHARACTERIZATION OF CURRENT TRANSPORT IN MNOS STRUCTURES WITH COMPLEMENTARY TUNNELING EMITTER BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 899 - 906

[10] A LOW-VOLTAGE ALTERABLE EEPROM WITH METAL-OXIDE NITRIDE OXIDE SEMICONDUCTOR (MONOS) STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 122 - 128

[1] CONDUCTION AND CHARGE TRAPPING IN POLYSILICON-SILICON NITRIDE-OXIDE-SILICON STRUCTURES UNDER POSITIVE GATE BIAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 459 - 467

[2] CHANG CY, 1985, IEEE ELECTRON DEVICE, V6, P488

[3] THERMAL-OXIDATION RATE OF A SI3N4 FILM AND ITS MASKING EFFECT AGAINST OXIDATION OF SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 1049 - 1058

[4] KIM SC, 1986, EL SOC EXT ABSTR, V86, P625

[5] LIOU FT, 1984, IEEE T ELECTRON DEV, V31, P1736, DOI 10.1109/T-ED.1984.21780

[6] CHARGE TRANSPORT AND TRAPPING IN SILICON NITRIDE SILICON DIOXIDE DIELECTRIC DOUBLE-LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4300 - 4306

[7] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 996 - 1003

[8] STUDY OF CARRIER TRAPPING IN STACKED DIELECTRICS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) : 486 - 489

[9] CHARACTERIZATION OF CURRENT TRANSPORT IN MNOS STRUCTURES WITH COMPLEMENTARY TUNNELING EMITTER BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 899 - 906

[10] A LOW-VOLTAGE ALTERABLE EEPROM WITH METAL-OXIDE NITRIDE OXIDE SEMICONDUCTOR (MONOS) STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 122 - 128