THERMAL-OXIDATION RATE OF A SI3N4 FILM AND ITS MASKING EFFECT AGAINST OXIDATION OF SILICON

被引：52

作者：

ENOMOTO, T ^{[1
]}

ANDO, R ^{[1
]}

MORITA, H ^{[1
]}

NAKAYAMA, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,KITA ITAMI WORKS,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 06期

关键词：

D O I：

10.1143/JJAP.17.1049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1049 / 1058

页数：10

相关论文

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