A NITRIC OXIDE PROCESS FOR DEPOSITION OF SILICA FILMS

被引:17
作者
RAND, MJ
机构
关键词
D O I
10.1149/1.2426566
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:274 / &
相关论文
共 9 条
[1]   REACTIONS IN THE SYSTEM HYDROGEN, CHLORINE, NITRIC OXIDE AND NITROSYL CHLORIDE .1. THE REACTION BETWEEN HYDROGEN AND CHLORINE IN THE PRESENCE OF NITRIC OXIDE AND NITROSYL CHLORIDE [J].
ASHMORE, PG ;
CHANMUGAM, J .
TRANSACTIONS OF THE FARADAY SOCIETY, 1953, 49 (03) :254-265
[2]   CATALYTIC REDUCTION OF NITRIC OXIDE [J].
AYEN, RJ ;
PETERS, MS .
INDUSTRIAL & ENGINEERING CHEMISTRY PROCESS DESIGN AND DEVELOPMENT, 1962, 1 (03) :204-&
[3]   KINETICS OF THE HOMOGENEOUS REACTION OF NO AND H2 [J].
GRAVEN, WM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1957, 79 (14) :3697-3700
[4]  
MAXWELL KH, 1965, ELECTROCHEM TECHNOL, V3, P37
[5]   EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].
PLISKIN, WA ;
GNALL, RP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :872-873
[6]   DEPOSITION OF SILICA FILMS ON GERMANIUM BY CARBON DIOXIDE PROCESS [J].
RAND, MJ ;
ASHWORTH, JL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (01) :48-&
[7]  
SOURIRAJAN S, 1961, INT J AIR WATER POLL, V5, P24
[8]   SUCCESSIVE GROWTH OF SI AND SIO2 IN EPITAXIAL APPARATUS [J].
STEINMAIER, W ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) :206-209
[9]  
TUNG SK, 1965, T METALL SOC AIME, V233, P572