SUCCESSIVE GROWTH OF SI AND SIO2 IN EPITAXIAL APPARATUS

被引：46

作者：

STEINMAIER, W

BLOEM, J

机构：

来源：

关键词：

D O I：

10.1149/1.2426084

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：206 / 209

页数：4

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[4] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J].

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[5] OXIDATION OF SILICON BY HIGH-PRESSURE STEAM [J].

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[6]

STEINMAIER W, 1963, PHILIPS RES REP, V18, P75

[7] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

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