PROPERTIES OF ANODIC OXIDE-FILMS FORMED IN ANODIZATION OF SILICON-NITRIDE

被引：16

作者：

DELLOCA, CJ ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 09期

关键词：

D O I：

10.1149/1.2403667

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1225 / 1230

页数：6

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[4] COMBINATION OF SILICON-NITRIDE AND ALUMINUM ANODIZATION FOR SEMICONDUCTOR DEVICE PASSIVATION [J].

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BARRY, ML .

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[7] CONVERSION OF SILICON NITRIDE FILMS TO ANODIC SIO2 [J].

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[8] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J].

SZE, SM .

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[9] ANODIC OXIDATION OF SILICON NITRIDE FILMS ON SILICON [J].

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[10] AN ELLIPSOMETRIC STUDY OF STEADY-STATE HIGH FIELD IONIC CONDUCTION IN ANODIC OXIDE FILMS ON TANTALUM NIOBIUM AND SILICON [J].

YOUNG, L ;

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