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SURFACE OXIDATION OF SILICON-NITRIDE FILMS
被引:258
作者
:
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
RAIDER, SI
[
1
]
FLITSCH, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
FLITSCH, R
[
1
]
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
ABOAF, JA
[
1
]
PLISKIN, WA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
PLISKIN, WA
[
1
]
机构
:
[1]
IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1976年
/ 123卷
/ 04期
关键词
:
D O I
:
10.1149/1.2132877
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:560 / 565
页数:6
相关论文
共 17 条
[1]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(12)
: 1736
-
&
[2]
PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
GRAY, PV
HEUMANN, FK
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
HEUMANN, FK
PHILIPP, HR
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
PHILIPP, HR
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
TAFT, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 311
-
&
[3]
INVESTIGATION OF COMPOSITION OF SPUTTERED SILICONE NITRIDE FILMS BY NUCLEAR MICROANALYSIS
CROSET, M
论文数:
0
引用数:
0
h-index:
0
CROSET, M
RIGO, S
论文数:
0
引用数:
0
h-index:
0
RIGO, S
AMSEL, G
论文数:
0
引用数:
0
h-index:
0
AMSEL, G
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(02)
: 33
-
&
[4]
A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION
DRUM, CM
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Allentown, PA
DRUM, CM
RAND, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Allentown, PA
RAND, MJ
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(09)
: 4458
-
&
[5]
CHARGING EFFECT IN X-RAY PHOTOELECTRON SPECTROMETRY
EBEL, MF
论文数:
0
引用数:
0
h-index:
0
机构:
TH VIENNA,INST TECH PHYS,KARLSPLATZ 13,A-1040 VIENNA,AUSTRIA
TH VIENNA,INST TECH PHYS,KARLSPLATZ 13,A-1040 VIENNA,AUSTRIA
EBEL, MF
EBEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
TH VIENNA,INST TECH PHYS,KARLSPLATZ 13,A-1040 VIENNA,AUSTRIA
TH VIENNA,INST TECH PHYS,KARLSPLATZ 13,A-1040 VIENNA,AUSTRIA
EBEL, H
[J].
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,
1974,
3
(03)
: 169
-
180
[6]
FLITSCH R, 1975, J VACUUM SCI TECHNOL, V12, P299
[7]
CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN
FRANZ, I
论文数:
0
引用数:
0
h-index:
0
FRANZ, I
LANGHEINRICH, W
论文数:
0
引用数:
0
h-index:
0
LANGHEINRICH, W
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 499
-
+
[8]
SURFACE SENSITIVITY AND ANGULAR DEPENDENCE OF X-RAY PHOTOELECTRON SPECTRA
FRASER, WA
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
FRASER, WA
FLORIO, JV
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
FLORIO, JV
DELGASS, WN
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
DELGASS, WN
ROBERTSON, WD
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
ROBERTSON, WD
[J].
SURFACE SCIENCE,
1973,
36
(02)
: 661
-
674
[9]
SILICON NITRIDE FILMS BY REACTIVE SPUTTERING
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
GREGOR, LV
论文数:
0
引用数:
0
h-index:
0
GREGOR, LV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(08)
: 826
-
+
[10]
Johansson G., 1973, Journal of Electron Spectroscopy and Related Phenomena, V2, P295, DOI 10.1016/0368-2048(73)80022-2
←
1
2
→
共 17 条
[1]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(12)
: 1736
-
&
[2]
PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
GRAY, PV
HEUMANN, FK
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
HEUMANN, FK
PHILIPP, HR
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
PHILIPP, HR
TAFT, EA
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, New York
TAFT, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
: 311
-
&
[3]
INVESTIGATION OF COMPOSITION OF SPUTTERED SILICONE NITRIDE FILMS BY NUCLEAR MICROANALYSIS
CROSET, M
论文数:
0
引用数:
0
h-index:
0
CROSET, M
RIGO, S
论文数:
0
引用数:
0
h-index:
0
RIGO, S
AMSEL, G
论文数:
0
引用数:
0
h-index:
0
AMSEL, G
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(02)
: 33
-
&
[4]
A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION
DRUM, CM
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Allentown, PA
DRUM, CM
RAND, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Allentown, PA
RAND, MJ
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(09)
: 4458
-
&
[5]
CHARGING EFFECT IN X-RAY PHOTOELECTRON SPECTROMETRY
EBEL, MF
论文数:
0
引用数:
0
h-index:
0
机构:
TH VIENNA,INST TECH PHYS,KARLSPLATZ 13,A-1040 VIENNA,AUSTRIA
TH VIENNA,INST TECH PHYS,KARLSPLATZ 13,A-1040 VIENNA,AUSTRIA
EBEL, MF
EBEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
TH VIENNA,INST TECH PHYS,KARLSPLATZ 13,A-1040 VIENNA,AUSTRIA
TH VIENNA,INST TECH PHYS,KARLSPLATZ 13,A-1040 VIENNA,AUSTRIA
EBEL, H
[J].
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,
1974,
3
(03)
: 169
-
180
[6]
FLITSCH R, 1975, J VACUUM SCI TECHNOL, V12, P299
[7]
CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN
FRANZ, I
论文数:
0
引用数:
0
h-index:
0
FRANZ, I
LANGHEINRICH, W
论文数:
0
引用数:
0
h-index:
0
LANGHEINRICH, W
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 499
-
+
[8]
SURFACE SENSITIVITY AND ANGULAR DEPENDENCE OF X-RAY PHOTOELECTRON SPECTRA
FRASER, WA
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
FRASER, WA
FLORIO, JV
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
FLORIO, JV
DELGASS, WN
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
DELGASS, WN
ROBERTSON, WD
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
YALE UNIV, BECTON CTR, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
ROBERTSON, WD
[J].
SURFACE SCIENCE,
1973,
36
(02)
: 661
-
674
[9]
SILICON NITRIDE FILMS BY REACTIVE SPUTTERING
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
GREGOR, LV
论文数:
0
引用数:
0
h-index:
0
GREGOR, LV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(08)
: 826
-
+
[10]
Johansson G., 1973, Journal of Electron Spectroscopy and Related Phenomena, V2, P295, DOI 10.1016/0368-2048(73)80022-2
←
1
2
→