A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION

被引：37

作者：

DRUM, CM

RAND, MJ

机构：

[1] Bell Telephone Laboratories, Inc., Allentown, PA

来源：

关键词：

D O I：

10.1063/1.1656991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：4458 / &

共 13 条

[1] ANDERSON JC, 1966, THIN FILMS ED, P261
[2] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP
BRENNER, A
SENDEROFF, S
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123
[3] PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
GRAY, PV
HEUMANN, FK
PHILIPP, HR
TAFT, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &
[4] FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 318 - &
[5] COLBY JW, 1968, ADVANCES XRAY ANALYS, V11, P287
[6] DRUM CM, UNPUBLISHED
[7] STRESS ANISOTROPY IN EVAPORATED IRON FILMS
FINEGAN, JD
HOFFMAN, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 597 - 598
[8] DETERMINATION OF STRESS IN FILMS ON SINGLE CRYSTALLINE SILICON SUBSTRATES
GLANG, R
HOLMWOOD, RA
ROSENFELD, RL
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (01) : 7 - +
[9] HOFFMAN RW, 1966, THIN FILMS, P261
[10] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
JACCODINE, RJ
SCHLEGEL, WA
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2429 - +