A LOW-VOLTAGE ALTERABLE EEPROM WITH METAL-OXIDE NITRIDE OXIDE SEMICONDUCTOR (MONOS) STRUCTURES

被引：78

作者：

SUZUKI, E

HIRAISHI, H

ISHII, K

HAYASHI, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/T-ED.1983.21085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：122 / 128

页数：7

相关论文

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