A LOW-VOLTAGE ALTERABLE EEPROM WITH METAL-OXIDE NITRIDE OXIDE SEMICONDUCTOR (MONOS) STRUCTURES

被引：78

作者：

SUZUKI, E

HIRAISHI, H

ISHII, K

HAYASHI, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/T-ED.1983.21085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：122 / 128

页数：7

相关论文

共 34 条

[21] SURFACE OXIDATION OF SILICON-NITRIDE FILMS
RAIDER, SI
FLITSCH, R
ABOAF, JA
PLISKIN, WA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 560 - 565
[22] REN SY, 1980, PHYSICS MOS INSULATO, P73
[23] TEST-RESULTS ON AN MNOS MEMORY ARRAY
SCHUERMEYER, FL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 564 - 568
[24] MODEL OF DEGRADATION MECHANISMS IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES
SUZUKI, E
HAYASHI, Y
YANAI, H
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 790 - 792
[25] TRANSPORT PROCESSES OF ELECTRONS IN MNOS STRUCTURES
SUZUKI, E
HAYASHI, Y
YANAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7001 - 7006
[26] DEGRADATION PROPERTIES IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES
SUZUKI, E
HAYASHI, Y
YANAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6377 - 6385
[27] SUZUKI E, 1978, IECE SSD7860 SSD GRO
[28] SUZUKI E, UNPUB
[29] TANAKA T, 1975, J JAPAN SOC APPL PHY, V44, P203
[30] ELECTRICALLY REPROGRAMABLE NONVOLATILE SEMICONDUCTOR MEMORY
TARUI, Y
NAGAI, K
HAYASHI, Y
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 369 - &

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