DEGRADATION PROPERTIES IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES

被引：14

作者：

SUZUKI, E ^{[1
]}

HAYASHI, Y ^{[1
]}

YANAI, H ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.328581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：6377 / 6385

页数：9

相关论文

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