THEORY OF MNOS MEMORY TRANSISTOR

被引:60
作者
CHANG, JJ [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1109/T-ED.1977.18770
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:511 / 518
页数:8
相关论文
共 24 条
[1]   SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].
ARNETT, PC ;
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96
[2]   TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J].
ARNETT, PC .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5236-5243
[3]   EFFECT OF DISTRIBUTED CHARGE IN NITRIDE OF AN MNOS STRUCTURE ON FLAT-BAND VOLTAGE [J].
CHANG, JJ .
APPLIED PHYSICS LETTERS, 1976, 29 (11) :742-743
[4]   NONVOLATILE SEMICONDUCTOR MEMORY DEVICES [J].
CHANG, JJ .
PROCEEDINGS OF THE IEEE, 1976, 64 (07) :1039-1059
[5]  
CHANG JJ, 1976, 1ST IEEE NONV SEM ME
[6]  
Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109
[7]   THEORY OF MNOS MEMORY DEVICE BEHAVIOR [J].
FERRISPRABHU, AV .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (02) :125-134
[8]   CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].
FROHMANB.D ;
LENZLINGER, M .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+
[9]  
FROHMANBENTCHKO.D, 1968, IEDM LATE NEWS OCT
[10]  
GOODMAN AM, 1976, 1ST IEEE NONV SEM ME