EFFECT OF DISTRIBUTED CHARGE IN NITRIDE OF AN MNOS STRUCTURE ON FLAT-BAND VOLTAGE

被引：2

作者：

CHANG, JJ ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 11期

关键词：

D O I：

10.1063/1.88924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：742 / 743

页数：2

共 12 条

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ARNETT, PC ;

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96

[2]

CHANG J, 1976, IEEE P, V64, P1039

[3] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

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[4] CHARGE CENTROID AND TRAPPING MODEL FOR MNOS STRUCTURES [J].

LEHOVEC, K ;

CRAIN, DW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2763-2764

[5]

LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826

[6]

MAES H, 1974, IEDM TECH DIGEST, V119

[7]

ROSS EC, 1969, RCA REV, V30, P366

[8] EFFECTS OF BULK TRAPPING ON MEMORY CHARACTERISTICS OF THICK OXIDE MNOS VARIABLE-THRESHOLD CAPACITORS [J].

TAYLOR, GW ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1974, 17 (01) :1-10

[9] TRAPPING, EMISSION AND GENERATION IN MNOS MEMORY DEVICES [J].

WEI, LS ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :591-598

[10] CHARACTERIZATION OF THIN OXIDE MNOS MEMORY TRANSISTORS [J].

WHITE, MH ;

CRICCHI, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) :1280-&

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