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CHARGE CENTROID AND TRAPPING MODEL FOR MNOS STRUCTURES
被引:32
作者
:
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
LEHOVEC, K
CRAIN, DW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
CRAIN, DW
机构
:
[1]
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
[2]
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
[3]
USN,UNDERSEA CTR,SAN DIEGO,CA 92132
来源
:
JOURNAL OF APPLIED PHYSICS
|
1976年
/ 47卷
/ 06期
关键词
:
D O I
:
10.1063/1.322940
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2763 / 2764
页数:2
相关论文
共 3 条
[1]
SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES
ARNETT, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARNETT, PC
YUN, BH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YUN, BH
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 94
-
96
[2]
ELECTRON AND HOLE TRANSPORT IN CVD SI3N4 FILMS
YUN, BH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YUN, BH
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(04)
: 256
-
258
[3]
MEASUREMENTS OF CHARGE PROPAGATION IN SI3N4 FILMS
YUN, BH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YUN, BH
[J].
APPLIED PHYSICS LETTERS,
1974,
25
(06)
: 340
-
342
←
1
→
共 3 条
[1]
SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES
ARNETT, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARNETT, PC
YUN, BH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YUN, BH
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(03)
: 94
-
96
[2]
ELECTRON AND HOLE TRANSPORT IN CVD SI3N4 FILMS
YUN, BH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YUN, BH
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(04)
: 256
-
258
[3]
MEASUREMENTS OF CHARGE PROPAGATION IN SI3N4 FILMS
YUN, BH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YUN, BH
[J].
APPLIED PHYSICS LETTERS,
1974,
25
(06)
: 340
-
342
←
1
→