THRESHOLD-ALTERABLE SI-GATE MOS DEVICES

[1] THIN-FILM MEMORY TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 740 - 740

[2] INTERFACE INSTABILITY OF RF SPUTTERED SILICON-NITRIDE FILMS ON SILICON [J]. THIN SOLID FILMS, 1974, 21 (02) : 245 - 253

[3] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[4] CRICCHI JR, 1973, IEDM TECH DIG, P126

[5] FAGAN JL, 1976, ISSCC DIGEST TECH PA, P184

[6] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &

[7] KHANG D, 1974, IEEE T ELECTRON DEVI, V21, P740

[8] KOO TK, 1974, IEEE NAECON, P37

[9] LOCKWOOD GC, 1972, IEEE WESCON SEP

[10] DISCHARGE OF MNOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 811 - +

[1] THIN-FILM MEMORY TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 740 - 740

[2] INTERFACE INSTABILITY OF RF SPUTTERED SILICON-NITRIDE FILMS ON SILICON [J]. THIN SOLID FILMS, 1974, 21 (02) : 245 - 253

[3] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[4] CRICCHI JR, 1973, IEDM TECH DIG, P126

[5] FAGAN JL, 1976, ISSCC DIGEST TECH PA, P184

[6] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &

[7] KHANG D, 1974, IEEE T ELECTRON DEVI, V21, P740

[8] KOO TK, 1974, IEEE NAECON, P37

[9] LOCKWOOD GC, 1972, IEEE WESCON SEP

[10] DISCHARGE OF MNOS STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 811 - +