DISCHARGE OF MNOS STRUCTURES

被引：129

作者：

LUNDKVIST, L ^{[1
]}

LUNDSTROM, I ^{[1
]}

SVENSSON, C ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 07期

关键词：

D O I：

10.1016/0038-1101(73)90178-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：811 / +

页数：1

相关论文

共 14 条

[1] ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, pCH5
[2] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
ROBINETT.WC
CARLSON, HG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &
[3] MNOS MEMORY TRANSISTORS IN SIMPLE MEMORY ARRAYS
CARLSTEDT, LG
SVENSSON, CM
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 382 - +
[4] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
LENZLINGER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +
[5] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON
GOODMAN, AM
BREECE, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 982 - &
[6] KERN W, 1970, RCA REV, V31, P187
[7] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
SNOW, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +
[8] PROPERTIES OF MNOS STRUCTURES
LUNDSTRO.KI
SVENSSON, CM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 826 - &
[9] TUNNELING TO TRAPS IN INSULATORS
LUNDSTROM, I
SVENSSON, C
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5045 - 5047
[10] Lundstrom I., 1970, Physica Status Solidi A, V1, P395, DOI 10.1002/pssa.19700010305