SINGLE-CRYSTAL AL GROWTH ON SI(111) BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY

被引：25

作者：

MIURA, Y

FUJIEDA, S

HIROSE, K

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 15期

关键词：

D O I：

10.1063/1.109595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al films were formed by low temperature molecular beam epitaxy on Si(111) surfaces. The substrates were pretreated in a NH4F solution to obtain a nearly atomically flat surface by anisotropic etching. Planview transmission electron microscopy observation demonstrates that single-crystal Al films are successfully grown on the 7 X 7 surface structure. Such single-crystal growth is arrested on a disordered or hydrogen-terminated surface.

引用

页码：1751 / 1753

页数：3

共 17 条

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