ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE

[21] OBSERVATION OF MICROPLASMA PULSES AND ELECTROLUMINESCENCE IN GALLIUM PHOSPHIDE SINGLE CRYSTAL [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) : 935 - 936

[22] INFRARED LATTICE ABSORPTION OF GAP [J]. PHYSICAL REVIEW, 1960, 118 (01): : 110 - 117

[23] BIMOLECULAR ELECTROLUMINESCENT TRANSITIONS IN GAP [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (01) : 23 - 25

[24] LOEBNER EE, 1959, B AM PHYS SOC, V4, P45

[25] OBSERVATIONS OF ZENER CURRENT IN GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1951, 83 (03): : 650 - 651

[26] Moss TS., 1959, OPTICAL PROPERTIES S

[27] ION DRIFT IN AN N-P JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302

[28] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[29] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[30] OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 339 - 341

[21] OBSERVATION OF MICROPLASMA PULSES AND ELECTROLUMINESCENCE IN GALLIUM PHOSPHIDE SINGLE CRYSTAL [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) : 935 - 936

[22] INFRARED LATTICE ABSORPTION OF GAP [J]. PHYSICAL REVIEW, 1960, 118 (01): : 110 - 117

[23] BIMOLECULAR ELECTROLUMINESCENT TRANSITIONS IN GAP [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (01) : 23 - 25

[24] LOEBNER EE, 1959, B AM PHYS SOC, V4, P45

[25] OBSERVATIONS OF ZENER CURRENT IN GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1951, 83 (03): : 650 - 651

[26] Moss TS., 1959, OPTICAL PROPERTIES S

[27] ION DRIFT IN AN N-P JUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 291 - 302

[28] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[29] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489

[30] OPTICAL ABSORPTION IN N-TYPE GALLIUM PHOSPHIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 339 - 341