In situ plasma monitoring of pulsed laser deposition of diamond-like carbon films

被引:14
作者
Voevodin, AA
Laube, SJP
机构
关键词
laser ablation; process control; diamond-like carbon; thin films;
D O I
10.1016/0257-8972(96)80004-1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Pulsed laser deposition (PLD) is a dynamically unstable process, which can be controlled by in situ diagnostic methods. Recently, an optical spectrometer (OS) was used to monitor the plasma composition and a quartz crystal microbalance (QCM) was introduced to control the deposition rate. In the present studies, the development of PLD in situ control is continued by introducing an ion probe into the plasma and using the OS to measure the kinetic energy of carbon ions in diamond-like carbon (DLC) deposition. An original approach was used to read probe currents with 1024 sampling points during the time of flight of ablated species from the target to the substrate. The method was applied to the deposition of DLC, comparing the ablation of graphite and polycarbonate targets, using a 248 nm KrF wavelength. The correlation of probe currents with QCM and OS data is discussed and compared with results from electron energy loss spectroscopy and microindentation studies. Quantitative dependences between the laser fluence and kinetic energy of carbon species, deposition rate and ion current are found. A possible method for in situ control of DLC film growth with required properties is proposed based on the combination of these studies and existing models of DLC deposition and PLD dynamic control.
引用
收藏
页码:670 / 674
页数:5
相关论文
共 16 条
[1]  
Chrisey D.B., 1994, PULSED LASER DEPOSIT, V1st, P1
[2]   THE USE OF LANGMUIR PROBES AND OPTICAL-EMISSION SPECTROSCOPY TO MEASURE ELECTRON-ENERGY DISTRIBUTION-FUNCTIONS IN RF-GENERATED ARGON PLASMAS [J].
COX, TI ;
DESHMUKH, VGI ;
HOPE, DAO ;
HYDES, AJ ;
BRAITHWAITE, NS ;
BENJAMIN, NMP .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1987, 20 (07) :820-831
[3]   VAPOR-DEPOSITION PROCESSES FOR AMORPHOUS-CARBON FILMS WITH SP3 FRACTIONS APPROACHING DIAMOND [J].
CUOMO, JJ ;
PAPPAS, DL ;
BRULEY, J ;
DOYLE, JP ;
SAENGER, KL .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1706-1711
[4]   IN-SITU RAMAN-SPECTROSCOPY DURING DIAMOND GROWTH IN A MICROWAVE PLASMA REACTOR [J].
FAYETTE, L ;
MARCUS, B ;
MERMOUX, M ;
ROSMAN, N ;
ABELLO, L ;
LUCAZEAU, G .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1604-1608
[5]  
LAUBE SJP, 1994, OCT P S ART INT REAL, P159
[6]  
LAUGHLIN WT, 1995, IN PRESS MATER RES S, V354
[7]  
LOCHTHHOLTGREVE.W, 1968, PLASMA DIAGNOSTICS, P670
[8]  
RICKERBY DS, 1991, ADV SURFACE COATINGS, P97
[9]   THE DEPOSITION MECHANISM OF DIAMOND-LIKE AC AND A-C-H [J].
ROBERTSON, J .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :361-368
[10]  
ROBERTSON J, 1993, J NONCRYST SOLIDS, V164, P1115