SURFACE X-RAY-SCATTERING DURING CRYSTAL-GROWTH - GE ON GE(111)

被引：137

作者：

VLIEG, E

VANDERGON, AWD

VANDERVEEN, JF

MACDONALD, JE

NORRIS, C

机构：

[1] UNIV WALES UNIV COLL CARDIFF,CARDIFF CF1 1XL,S GLAM,WALES

[2] UNIV LEICESTER,LEICESTER LE1 7RH,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 61卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.61.2241

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2241 / 2244

页数：4

共 14 条

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[7] QUANTITATIVE-ANALYSIS OF STREAKS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION - GAAS AND ALAS DEPOSITED ON GAAS(001)
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[J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8329 - 8335
[8] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES
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[J]. SURFACE SCIENCE, 1984, 139 (01) : 121 - 154
[9] STRUCTURE DETERMINATION OF THE GE(111)-C(2X8) SURFACE BY MEDIUM-ENERGY ION-SCATTERING
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[J]. PHYSICAL REVIEW B, 1988, 38 (02): : 1585 - 1588
[10] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8

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