FABRICATION OF BOND AND ETCH-BACK SILICON ON INSULATOR USING A STRAINED SI0.7GE0.3 LAYER AS AN ETCH STOP

被引：20

作者：

GODBEY, DJ ^{[1
]}

TWIGG, ME ^{[1
]}

HUGHES, HL ^{[1
]}

PALKUTI, LJ ^{[1
]}

LEONOV, P ^{[1
]}

WANG, JJ ^{[1
]}

机构：

[1] ARACOR,SUNNYVALE,CA 94086

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 10期

关键词：

D O I：

10.1149/1.2086190

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Bond and etch-back silicon on insulator was fabricated using a strain-selective etch and a novel etch stop consisting of a strained Si0.7Ge0.3 layer deposited by molecular beam epitaxy. The process was used to fabricate a 200–350 nm silicon layer on insulator. A 350-nm silicon film on insulator fabricated by this technique was very lightly p-type with a carrier density of less than 1015 cm−3. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：3219 / 3223

页数：5