STRUCTURE-ANALYSIS OF THE SI(111) SQUARE-ROOT 3 X SQUARE-ROOT 3R30-DEGREES-AG SURFACE

被引：200

作者：

KATAYAMA, M

WILLIAMS, RS

KATO, M

NOMURA, E

AONO, M

机构：

[1] AONO ATOMCRAFT PROJECT,TOKYO,TOKYO 173,JAPAN

[2] EHIME UNIV,DEPT PHYS,MATSUYAMA,EHIME 790,JAPAN

[3] UNIV CALIF LOS ANGELES,DEPT CHEM & BIOCHEM,LOS ANGELES,CA 90024

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.66.2762

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structure of the Si(111) square-root 3 x square-root 3R30-degrees-Ag surface has been analyzed with a novel form of low-energy ion-scattering spectroscopy and energy-minimization calculations. The topmost layer of the surface is formed by Ag atoms with a honeycomb-chained-trimer arrangement in which the intratrimer Ag-Ag distance is 5.1 +/- 0.2 angstrom. At 0.75 +/- 0.07 angstrom below the Ag layer, there exists a Si layer with three Si atoms per surface unit cell. The lower layer of the subsequent bulklike Si double layers is split into a honeycomb and a square-root 3 x square-root 3 layer with a large interlayer distance of about 0.6 angstrom.

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页码：2762 / 2765

页数：4

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