SPRAY SELECTIVE ETCH PROCESS FOR SHORT-CAVITY FABRICATION OF GAAS/GAALAS SURFACE EMITTING LASER

被引：3

作者：

TANOBE, H

TAMANUKI, T

UCHIDA, T

KOYAMA, F

IGA, K

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 03期

关键词：

GALLIUM ARSENIDE; SURFACE EMITTING LASERS; SPRAY ETCH; PREFERENTIAL ETCH;

D O I：

10.1143/JJAP.31.949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have improved the fabrication process forming the short cavity structure for GaAs/GaAlAs vertical cavity surface emitting lasers. A complete flat epitaxial surface for the output side mirror was obtained by selectively removing the GaAs substrate using a spray wet etch. We present some results on surface characterization.

引用

页码：949 / 950

页数：2

共 7 条

[1] CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS [J].