ATOMIC-RESOLUTION ELECTRON-MICROSCOPE IMAGES FORMED BY SIL(3)-IONIZATION ELECTRONS

被引：6

作者：

ENDOH, H ^{[1
]}

HASHIMOTO, H ^{[1
]}

机构：

[1] OKAYAMA UNIV SCI,DEPT MECH ENGN,OKAYAMA 700,JAPAN

来源：

ULTRAMICROSCOPY | 1994年 / 54卷 / 2-4期

关键词：

D O I：

10.1016/0304-3991(94)90135-X

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Contrast of energy-filtered electron microscope images with atomic resolution of Si atoms producing SiL(3)-ionization electrons in a Si crystal is discussed. The localization width of the inelastic scattering potential is deduced from the inelastic scattering factor for SiL(3)-ionization, which is based on a program for a modified hydrogenic L-shell cross section. The image contrast at the bottom surfaces of the Si crystals containing a single inelastic scattering layer at the top, middle and bottom layers showed diffuse, sharp and very sharp image contrast, i.e. top-bottom effect is predominant. Similar images of an atom which scattered electrons inelastically with a very small energy loss in an aluminum crystal were calculated and it is noted that the atomic structure of aluminum is observed.

引用

页码：351 / 356

页数：6

共 15 条

[1] ATOMIC-STRUCTURE IMAGES FORMED BY PLASMA-LOSS ELECTRONS [J].