INTERFACIAL REACTIONS IN TI/SIC LAYERED FILMS WITH AND WITHOUT THIN DIFFUSION-BARRIERS

被引：23

作者：

NATHAN, M

AHEARN, JS

机构：

[1] Martin Marietta Laboratories, Baltimore, MD 21227

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1990年 / 126卷 / 1-2期

关键词：

Ceramic Materials - Hot Pressing - Films - Interfaces - Titanium and Alloys - Metallic Matrix Composites;

D O I：

10.1016/0921-5093(90)90127-O

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Four materials-Al2O3, TiBx, VBx, and TaBx (x < 2)-with thicknesses from 50 to 200 Å were evaluated as interfacial reaction barriers between titanium and SiC in a thin film model system. Two of these materials-Al2O3 and TiBx-show effectiveness in slowing the interdiffusion and reaction of titanium and SiC under normal vacuum annealing at 820°C. None of the four materials shows any significant effect on the reaction in rapid thermal annealings at 900 and 1000°C, most probably owing due to thermal shock influences on the thin film system. The first product of the reaction between titanium and SiC is Ti5Si3, regardless of barrier. © 1990.

引用

页码：225 / 230

页数：6

共 8 条

[1]

[Anonymous], 1985, POWDER DIFFRACTION F

[2]

DAS G, 1988, 46TH P ANN M EL MICR, P738

[3]

LEPETITCORPS Y, 1987, J MICROSC SPECT ELEC, V12, P461

[4] EARLY STAGES IN THIN-FILM METAL SILICON AND METAL-SIO-2 REACTIONS UNDER RAPID THERMAL ANNEALING CONDITIONS - THE RAPID THERMAL ANNEALING TRANSMISSION ELECTRON-MICROSCOPY TECHNIQUE [J].