EARLY STAGES IN THIN-FILM METAL SILICON AND METAL-SIO-2 REACTIONS UNDER RAPID THERMAL ANNEALING CONDITIONS - THE RAPID THERMAL ANNEALING TRANSMISSION ELECTRON-MICROSCOPY TECHNIQUE

被引：7

作者：

NATAN, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1404 / 1408

页数：5

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[2]

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[5]

NATAN M, 1985, THIN FILMS INTERFACE, V54, P115

[6]

NATAN MJ, UNPUB

[7]

PRETORIUS R, 1984, THIN FILMS INTERFACE, V2, P15

[8]

RONAY M, 1983, APPL PHYS LETT, V42, P557

[9] FORMATION OF AN AMORPHOUS ALLOY BY SOLID-STATE REACTION OF THE PURE POLYCRYSTALLINE METALS [J].

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JOHNSON, WL .

PHYSICAL REVIEW LETTERS, 1983, 51 (05) :415-418

[10] 1ST PHASE NUCLEATION IN SILICON-TRANSITION-METAL PLANAR INTERFACES [J].

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BENE, RW .

APPLIED PHYSICS LETTERS, 1976, 28 (10) :624-625

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