THE GROWTH-PROCESSES OF THIN-FILM SILICIDES IN SI/NI PLANAR SYSTEMS

被引：19

作者：

MAJNI, G

COSTATO, M

PANINI, F

机构：

[1] Univ of Modena, Physics Dep, Modena,, Italy, Univ of Modena, Physics Dep, Modena, Italy

来源：

THIN SOLID FILMS | 1985年 / 125卷 / 1-2期

关键词：

PLANAR FILMS - RUTHERFORD BACKSCATTERING - THIN FILM SILICIDES;

D O I：

10.1016/0040-6090(85)90397-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：71 / 78

页数：8

共 12 条

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[2]

CHU WK, BACKSCATTERING SPECT, pCH4

[3] GROWTH-RATE AND PHASE FORMATION IN THE NICKEL-SILICON COUPLE [J].

COSTATO, M .

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[4]

Elliott RP, 1969, CONSTITUTION BINAR S

[5]

HANSEN M, 1959, CONSTITUTION BINARY

[6] GROWTH-KINETICS OF NISI ON (100) AND (111) SILICON [J].

MAJNI, G ;

DELLAVALLE, F ;

NOBILI, C .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (05) :L77-L81

[7] REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS [J].

OTTAVIANI, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1112-1119

[8]

OTTAVIANI G, 1982, RELIABILITY DEGRADAT, pCH2

[9]

PANINI F, UNPUB

[10]

Samsonov G.V., 1980, HDB REFRACTORY COMPO

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