SELF-ALIGNED TISI2 FOR BIPOLAR APPLICATIONS

被引:29
作者
KOH, Y
CHIEN, F
VORA, M
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期
关键词
D O I
10.1116/1.582941
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1715 / 1724
页数:10
相关论文
共 33 条
[1]   DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].
ALPERIN, ME ;
HOLLAWAY, TC ;
HAKEN, RA ;
GOSMEYER, CD ;
KARNAUGH, RV ;
PARMANTIE, WD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :141-149
[2]   ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION [J].
AMANO, J ;
MERCHANT, P ;
KOCH, T .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :744-746
[3]   SIZE EFFECT ON CONTACT RESISTANCE AND DEVICE SCALING [J].
COHEN, SS ;
GILDENBLAT, G ;
BROWN, DM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :978-980
[4]   CONTACT RESISTANCE AND METHODS FOR ITS DETERMINATION [J].
COHEN, SS .
THIN SOLID FILMS, 1983, 104 (3-4) :361-379
[5]   DOPANT REDISTRIBUTION IN SILICIDES - MATERIALS AND PROCESS ISSUES [J].
COOPER, CB ;
POWELL, RA ;
CHOW, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :718-722
[6]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371
[7]  
IYER SS, 1984, ELECTROCHEM SOC M, V84, P110
[8]   THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J].
JAHNEL, F ;
BIERSACK, J ;
CROWDER, BL ;
DHEURLE, FM ;
FINK, D ;
ISAAC, RD ;
LUCCHESE, CJ ;
PETERSSON, CS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7372-7378
[9]  
LAU CK, 1983, J ELECTROCHEM SOC M, V83, P569
[10]   IMPURITY EFFECTS IN TRANSITION-METAL SILICIDES [J].
LIEN, CD ;
NICOLET, MA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :738-747