HIGH-SENSITIVITY, HIGH-GAIN, LONG WAVELENGTH OEIC RECEIVER WITH MONOLITHICALLY INTEGRATED 3-STAGE PREAMPLIFIER

被引:7
作者
SHIMIZU, J [1 ]
SUZAKI, T [1 ]
TERAKADO, T [1 ]
FUJITA, S [1 ]
KASAHARA, K [1 ]
ITOH, T [1 ]
SUZUKI, A [1 ]
机构
[1] NEC CORP LTD,MICROELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
关键词
Optical receivers; Optoelectronics;
D O I
10.1049/el:19900538
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A GaAs-on-InP long wavelength OEIC receiver, with a monolithically integrated three-stage preamplifier, was designed using SPICE and fabricated. The three-stage OEIC receiver exhibited excellent performances, such as — 32-5dBm receiver sensitivity and 85dBQ transimpedance at 600 Mbit/s. These results indicate the feasibility of integrating large scale electronic circuits, which are considered as the OEIC merits, caused by using both GaAs-on-InP heterostructures and SPICE. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:824 / 825
页数:2
相关论文
共 3 条
[1]  
MUOI TV, 1984, IEEE OSA J LIGHTWAVE, V2, P243
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SUZAKI, T ;
FUJITA, S ;
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KASAHARA, K ;
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[3]   LONG-WAVELENGTH PINFET RECEIVER OEIC ON A GAAS-ON-INP HETEROSTRUCTURE [J].
SUZUKI, A ;
ITOH, T ;
TERAKADO, T ;
KASAHARA, K ;
ASANO, K ;
INOMOTO, Y ;
ISHIHARA, H ;
TORIKAI, T ;
FUJITA, S .
ELECTRONICS LETTERS, 1987, 23 (18) :954-955