FAST SILICON ETCHING USING AN EXPANDING CASCADE ARC PLASMA IN A SF6/ARGON MIXTURE

被引：20

作者：

BEULENS, JJ ^{[1
]}

WILBERS, ATM ^{[1
]}

HAVERLAG, M ^{[1
]}

OEHRLEIN, GS ^{[1
]}

KROESEN, GMW ^{[1
]}

SCHRAM, DC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.586072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An expanding cascaded arc is used as a fluorine atom source for fast etching of silicon. Extremely high etch rates up to 1.3 mum/s have been obtained. A reactor parameter study has been performed. The obtained selectivity Si/SiO2 is approximately 11 for substrate temperatures of 600-degrees-C, increasing to approximately 20 at 100-degrees-C. The etching proces is fully isotropic.

引用

页码：2387 / 2392

页数：6

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