SPUTTER-DEPOSITION OF YTTRIUM-OXIDES

被引:41
作者
JANKOWSKI, AF
SCHRAWYER, LR
HAYES, JP
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期
关键词
D O I
10.1116/1.578503
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The yttrium-oxide phase diagram contains only one equilibrium compound, a Y2O3 cubic structure. The process of reactive sputter deposition is used to synthesize previously unreported, yttrium-rich oxide compounds. A planar magnetron is operated in the direct-current mode using a working gas mixture of argon-20% oxygen. For low sputter gas pressure and flow conditions, the yttrium content of the coating is directly controlled as a function of the applied target power, i.e., the deposition rate. The composition and structure of the coatings are characterized using Auger depth profiling and x-ray diffraction. A continuous series of compounds are formed with an orthorhombic crystal structure for concentrations ranging from 40 to 75 at. % yttrium.
引用
收藏
页码:1548 / 1552
页数:5
相关论文
共 13 条
[11]   OXIDATION OF AN ALUMINUM MAGNETRON SPUTTERING TARGET IN AR-O2 MIXTURES [J].
MANIV, S ;
WESTWOOD, WD .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :718-725
[12]   MECHANISM OF RF REACTIVE SPUTTERING [J].
SHINOKI, F ;
ITOH, A .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3381-3384
[13]  
SOLOVEVA AE, 1985, INORG MATER+, V21, P701