LOW FREQUENCY OSCILLATIONS IN SEMI-INSULATING GALLIUM ARSENIDE

[1] BAGAEV VS, 1968, SOV PHYS SEMICOND+, V2, P700

[2] BARRAUD A, 1963, CR HEBD ACAD SCI, V256, P3632

[3] BARRAUD A, 1967, THESIS

[4] BLAKEMORE, 1962, SEMICONDUCTOR STATIS, pCH3

[5] BONCHBRUEVICH VL, 1959, FIZ TVERD TELA, P182

[6] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07): : 841 - &

[7] STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11): : 1425 - &

[8] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +

[9] STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3602 - +

[10] DOMAIN PROPERTIES IN GAAS OSCILLATING AT KHZ FREQUENCIES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 372 - +

[1] BAGAEV VS, 1968, SOV PHYS SEMICOND+, V2, P700

[2] BARRAUD A, 1963, CR HEBD ACAD SCI, V256, P3632

[3] BARRAUD A, 1967, THESIS

[4] BLAKEMORE, 1962, SEMICONDUCTOR STATIS, pCH3

[5] BONCHBRUEVICH VL, 1959, FIZ TVERD TELA, P182

[6] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07): : 841 - &

[7] STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11): : 1425 - &

[8] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +

[9] STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3602 - +

[10] DOMAIN PROPERTIES IN GAAS OSCILLATING AT KHZ FREQUENCIES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 372 - +