PULSE-HEIGHT DEFECTS FOR O-16, CL-35 AND BR-81 IONS IN SILICON SURFACE-BARRIER DETECTORS

The total pulse height defects (PHDs) of a silicon surface barrier detector (SSBD) for 16O, 35Cl and 81Br ions in the energy range 2-40 MeV have been measured. To evaluate the contribution Ew of the dead layer, its thickness was measured using α-particles. The nuclear defect En was calculated in first-order approximation, using Ziegler's values [J.F. Ziegler, J.P. Biersack and U. Littmark, The Stopping and Ranges of Ions in Matter, vol. 1 (Pergamon Press, New York, 1985)] for both the nuclear and the electronic stopping powers, and the results are compared with other calculations of En. The observed total defects could be essentially accounted for by Ew + En, suggesting that Er, the contribution due to residual defects, is small, in agreement with estimates based on the plasma recombination model [E.C. Finch et al., Nucl. Instr. and Meth. 163 (1979) 467]. © 1990.