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PULSE-HEIGHT DEFECT OF SILICON SURFACE BARRIER DETECTORS FOR URANIUM IONS IN RANGE OF 20 TO 120 MEV
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RESPONSE OF A SILICON SURFACE-BARRIER DETECTOR TO BROMINE, IODINE, AND URANIUM IONS
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INFLUENCE OF NON-CONSTANT CARRIER MOBILITY ON CHARGE TRANSPORT TIME IN SEMICONDUCTOR DETECTORS
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ANALYSIS OF CAUSES OF PULSE-HEIGHT DEFECT AND ITS MASS DEPENDENCE FOR HEAVY-ION SILICON DETECTORS
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1973, 113 (01)
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SOME FEATURES IN DEPENDENCE OF PULSE-HEIGHT DEFECT IN SEMICONDUCTOR-DETECTORS ON DETECTED PARTICLE ENERGY
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CALIBRATION PROCEDURE FOR RESPONSE OF SILICON SURFACE-BARRIER DETECTORS TO HEAVY-IONS
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THE PULSE-HEIGHT DEFECT FOR HEAVY-IONS IN SILICON SURFACE-BARRIER DETECTORS
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,
1982, 196 (01)
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[10]
NEW METHOD FOR CALIBRATING PULSE-HEIGHT DEFECT IN SOLID-STATE DETECTORS
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1978, 157 (02)
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