HOT CARRIERS IN SI AND GE RADIATION DETECTORS

被引:71
作者
DRUMMOND, WE
MOLL, JL
机构
关键词
D O I
10.1063/1.1659981
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5556 / +
页数:1
相关论文
共 16 条
[1]   HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J].
BARTELINK, D ;
MOLL, JL ;
MEYER, NI .
PHYSICAL REVIEW, 1963, 130 (03) :972-+
[2]   NORMAL MODES OF GERMANIUM BY NEUTRON SPECTROMETRY [J].
BROCKHOUSE, BN ;
IYENGAR, PK .
PHYSICAL REVIEW, 1958, 111 (03) :747-754
[3]  
CHANG DM, 1969, 50081 STANF EL LAB T
[4]   TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J].
DUH, CY ;
MOLL, JL .
SOLID-STATE ELECTRONICS, 1968, 11 (10) :917-+
[5]   IONIZATION YIELD OF RADIATIONS .2. THE FLUCTUATIONS OF THE NUMBER OF IONS [J].
FANO, U .
PHYSICAL REVIEW, 1947, 72 (01) :26-29
[6]   THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM [J].
HERMAN, F .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12) :1703-1732
[7]   TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290
[8]  
KANE EO, 1966, J PHYS SOC JPN, VS 21, P37
[10]  
MOLL JL, 1964, PHYSICS SEMICONDUCTO, P222