MOBILITY OF HOLES IN DEFORMED SEMICONDUCTORS

被引：28

作者：

DUSTER, F ^{[1
]}

LABUSCH, R ^{[1
]}

机构：

[1] UNIV GOTTINGEN,INST MET PHYS,126 GOTTINGEN,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1973年 / 60卷 / 01期

关键词：

D O I：

10.1002/pssb.2220600117

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：161 / 168

页数：8

共 13 条

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SCHETTLER, R
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[4] LABUSCH R, TO BE PUBLISHED
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[8] ELECTRON MOBILITY IN PLASTICALLY DEFORMED GERMANIUM
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[9] PODOR B, 1967, ACTA PHYS HUNG, V23, P393
[10] DIE ELEKTRISCHEN EIGENSCHAFTEN VON VERSETZUNGEN IN GERMANIUM
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