BULK LEVELS AND INTERFACE CALCULATIONS FOR NARROW BAND-GAP SEMICONDUCTORS

被引:23
作者
BLOOM, I
NEMIROVSKY, Y
机构
关键词
D O I
10.1016/0038-1101(88)90081-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:17 / 25
页数:9
相关论文
共 8 条
[1]  
KINCH MA, 1981, SEMICONDUCT SEMIMET, V18, P313
[2]  
LONG D, 1981, SEMICONDUCTORS SEMIM, V5
[3]  
LONG D, 1968, ENERGY BANDS SEMICON
[4]   AUTOMATED MEASUREMENT AND ANALYSIS OF MIS INTERFACES IN NARROW-BANDGAP SEMICONDUCTORS [J].
LUBZENS, D ;
KOLODNY, A ;
SHACHAMDIAMAND, YJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :546-551
[5]   MIS CAPACITANCE AND DERIVATIVE OF CAPACITANCE, WITH APPLICATION TO NONPARABOLIC BAND SEMICONDUCTORS [J].
MICHAEL, M ;
LEONARD, WF .
SOLID-STATE ELECTRONICS, 1974, 17 (01) :71-85
[6]   GATE-CONTROLLED HG1-XCDX TE PHOTODIODES PASSIVATED WITH NATIVE SULFIDES [J].
NEMIROVSKY, Y ;
ADAR, R ;
KORNFELD, A ;
KIDRON, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (04) :1986-1991
[7]  
Nicollian E. H., 1982, METAL OXIDE SEMICOND
[8]  
SEIWATZ R, 1957, J APPL PHYS, P1034