GATE-CONTROLLED HG1-XCDX TE PHOTODIODES PASSIVATED WITH NATIVE SULFIDES

被引：63

作者：

NEMIROVSKY, Y

ADAR, R

KORNFELD, A

KIDRON, I

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574013

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1986 / 1991

页数：6

共 10 条

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[2] GROVE AS, 1967, PHYS TECHNOL S, pCH10
[3] PROPERTIES OF ION-IMPLANTED JUNCTIONS IN MERCURY CADMIUM TELLURIDE
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[4] THE INTERFACE OF PLASMA-ANODIZED HG1-XCDXTE
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4888 - 4895
[5] INTERFACE OF P-TYPE HG1-XCDXTE PASSIVATED WITH NATIVE SULFIDES
NEMIROVSKY, Y
BURSTEIN, L
KIDRON, I
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 366 - 373
[6] ANODIC SULFIDE FILMS ON HG1-XCDXTE
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 443 - 444
[7] 1/F NOISE IN ION-IMPLANTED AND DOUBLE-LAYER EPITAXIAL HGCDTE PHOTODIODES
RADFORD, WA
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 183 - 188
[8] REINE MB, 1981, SEMICONDUCT SEMIMET, V18, P201
[9] INVESTIGATION OF GENERATION PROCESSES AT THE SIO2/HGCDTE INTERFACE BY GATE CONTROLLED DIODES
ROSBECK, JP
BLAZEJEWSKI, ER
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (01): : 280 - 284
[10] IMPROVED PERFORMANCE OF IMPLANTED N+-P HG1-XCDXTE PHOTO-DIODES USING INSULATED FIELD PLATES
SOOD, AK
TOBIN, SP
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 12 - 14