INVESTIGATION OF GENERATION PROCESSES AT THE SIO2/HGCDTE INTERFACE BY GATE CONTROLLED DIODES

被引：14

作者：

ROSBECK, JP

BLAZEJEWSKI, ER

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573240

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：280 / 284

页数：5

相关论文

共 14 条

[1] FIELD-INDUCED TUNNELING IN HG1-XCDX TE PHOTO-DIODES
ANDERSON, WW
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1080 - 1082
[2] FIELD-IONIZATION OF DEEP LEVELS IN SEMICONDUCTORS WITH APPLICATIONS TO HG1-XCDX TE P-N-JUNCTIONS
ANDERSON, WW
HOFFMAN, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 9130 - 9145
[3] BECK WA, 1982, P IRIS DETECTOR SPEC, P197
[4] SURFACE RECOMBINATION IN SEMICONDUCTORS
FITZGERALD, DJ
GROVE, AS
[J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +
[5] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +
[6] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[7] GROVE AS, 1967, PHYS TECHNOL S, pCH10
[8] ELECTRONIC-PROPERTIES OF HGCDTE
KINCH, MA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 215 - 219
[9] MILNES HG, 1972, HETEROJUNCTIONS META, P36
[10] Moll J. L, 1964, PHYS SEMICONDUCTOR, P253