ELECTRONIC-PROPERTIES OF HGCDTE

被引：48

作者：

KINCH, MA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1116/1.571719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：215 / 219

页数：5

共 10 条

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[2] CASSELMAN TN, 1980, J APPL PHYS, V52, P848
[3] RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE
KINCH, MA
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SIMMONS, A
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1649 - 1663
[4] GEOMETRICAL ENHANCEMENT OF HGCDTE PHOTOCONDUCTIVE DETECTORS
KINCH, MA
BORRELLO, SR
BREAZEALE, BH
SIMMONS, A
[J]. INFRARED PHYSICS, 1977, 17 (02): : 137 - 145
[5] 0.1 EV HGCDTE PHOTOCONDUCTIVE DETECTOR PERFORMANCE
KINCH, MA
BORRELLO, SR
SIMMONS, A
[J]. INFRARED PHYSICS, 1977, 17 (02): : 127 - 135
[6] KINCH MA, UNPUB SEMICONDUCTORS, V18
[7] KINCH MA, 1980, P IEDM, P508
[8] Moll J. L., 1964, PHYSICS SEMICONDUCTO, P252
[9] ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE
SCOTT, W
STELZER, EL
HAGER, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1408 - 1414
[10] WILLIAMS RL, 1971, 3RD P INT C PHOT STA, P237