FIELD-IONIZATION OF DEEP LEVELS IN SEMICONDUCTORS WITH APPLICATIONS TO HG1-XCDX TE P-N-JUNCTIONS

被引：76

作者：

ANDERSON, WW

HOFFMAN, HJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9130 / 9145

页数：16

共 48 条

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