QUANTUM-MECHANICAL ESTIMATES OF THE SPEED OF FIELD-IONIZATION OF SHALLOW IMPURITY LEVELS

被引:22
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CHAUDHURI, S
COON, DD
DERKITS, GE
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10.1063/1.91682
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O59 [应用物理学];
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页码:111 / 113
页数:3
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共 31 条
[1]   EXACT TREATMENT OF STARK EFFECT IN ATOMIC HYDROGEN [J].
ALEXANDER, MH .
PHYSICAL REVIEW, 1969, 178 (01) :34-+
[2]   DONOR BINDING-ENERGIES IN MULTIVALLEY SEMICONDUCTORS [J].
ALTARELLI, M ;
HSU, WY ;
SABATINI, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (21) :L605-L609
[3]  
ALTARELLI M, UNPUBLISHED
[4]   LOW-TEMPERATURE FIELD-IONIZATION OF LOCALIZED IMPURITY LEVELS IN SEMICONDUCTORS [J].
BANAVAR, JR ;
COON, DD ;
DERKITS, GE .
APPLIED PHYSICS LETTERS, 1979, 34 (01) :94-96
[5]   NEW CHARGE-STORAGE EFFECT IN SILICON P-I-N-DIODES AT CRYOGENIC TEMPERATURES [J].
BANAVAR, JR ;
COON, DD ;
DERKITS, G .
PHYSICAL REVIEW LETTERS, 1978, 41 (08) :576-579
[6]  
BANAVAR JR, UNPUBLISHED
[7]  
BANAVAR JR, 1979, Patent No. 4167791
[8]   ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J].
BASSANI, F ;
IADONISI, G ;
PREZIOSI, B .
REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) :1099-1210
[9]   EXCITED ATOMIC AND MOLECULAR-STATES IN STRONG ELECTROMAGNETIC-FIELDS [J].
BAYFIELD, JE .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1979, 51 (06) :317-391
[10]   Wannier Exciton in an electric field. I. Optical absorption by bound and continuum states [J].
Blossey, Daniel F. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :3976-3990