MEMORY PHENOMENA IN HETEROJUNCTION STRUCTURES - EVIDENCE FOR SUPPRESSED THERMIONIC EMISSION

被引：16

作者：

BELTRAM, F

CAPASSO, F

WALKER, JF

MALIK, RJ

机构：

来源：

关键词：

D O I：

10.1063/1.100400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：376 / 378

页数：3

共 12 条

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[2] DINGLE R, 1987, SEMICONDUCTORS SEMIM, V24
[3] FORREST SR, 1987, HETEROJUNCTION BAND, P363
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[5] HESS K, 1982, ADV ELECTRONIC ELECT, V59
[6] HESS K, 1988, ADV THEORY SEMICONDU, pCH12
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[8] MEASUREMENT OF HETEROJUNCTION BAND OFFSETS IN INP/GA0.47IN0.53AS BY ADMITTANCE SPECTROSCOPY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1215 - 1220
[9] HOT-ELECTRON MEMORY EFFECT IN DOUBLE-LAYERED HETEROSTRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1294 - 1296
[10] EFFECT OF A BURIED SUPERLATTICE ON THE DYNAMIC STORAGE OF ELECTRONS AT THE ALGAAS/GAAS HETEROJUNCTION
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1657 - 1659