THE INDUCTION PLASMA CHEMICAL REACTOR .1. EQUILIBRIUM-MODEL

被引：27

作者：

ZHAO, GY ^{[1
]}

MOSTAGHIMI, J ^{[1
]}

BOULOS, MI ^{[1
]}

机构：

[1] UNIV SHERBROOKE, DEPT CHEM ENGN, SHERBROOKE J1K 2R1, QUEBEC, CANADA

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 1990年 / 10卷 / 01期

关键词：

chemical equilibrium; Induction plasma; modeling; silicon nitride synthesis;

D O I：

10.1007/BF01460452

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

A mathematical model is presented for the numerical simulation of the flow, temperature, and concentration fields in an rf plasma chemical reactor. The simulation is performed assuming chemical equilibrium. The extent of validity of this assumption is discussed. The system considered is the reaction of SiCl4 and NH3 for the production of Si3N4. © 1990 Plenum Publishing Corporation.

引用

页码：133 / 150

页数：18

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