UNIFIED MODEL OF FUNDAMENTAL LIMITATIONS ON THE PERFORMANCE OF SILICON SOLAR-CELLS

[1] BRANDHORST HW, 1972, 9TH P IEEE PHOT SPEC, P37

[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[3] DASH S, 1970, SILICON DEVICE PROCE, P202

[4] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[5] Fischer H., 1975, 11th IEEE Photovoltaic Specialists Conference, P25

[6] Fossum J. G., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1294

[7] Hovel H, 1975, SEMICONDUCTOR SEMIME, V11, P58

[8] Iles P. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P19

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[10] METHODOLOGY FOR EXPERIMENTALLY BASED DETERMINATION OF GAP SHRINKAGE AND EFFECTIVE LIFETIMES IN EMITTER AND BASE OF P-N-JUNCTION SOLAR-CELLS AND OTHER P-N-JUNCTION DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 402 - 410

[1] BRANDHORST HW, 1972, 9TH P IEEE PHOT SPEC, P37

[2] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[3] DASH S, 1970, SILICON DEVICE PROCE, P202

[4] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[5] Fischer H., 1975, 11th IEEE Photovoltaic Specialists Conference, P25

[6] Fossum J. G., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1294

[7] Hovel H, 1975, SEMICONDUCTOR SEMIME, V11, P58

[8] Iles P. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P19

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[10] METHODOLOGY FOR EXPERIMENTALLY BASED DETERMINATION OF GAP SHRINKAGE AND EFFECTIVE LIFETIMES IN EMITTER AND BASE OF P-N-JUNCTION SOLAR-CELLS AND OTHER P-N-JUNCTION DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 402 - 410