PHOTOLUMINESCENCE SPECTROSCOPY OF NEAR-SURFACE QUANTUM-WELLS - ELECTRONIC COUPLING BETWEEN QUANTIZED ENERGY-LEVELS AND THE SAMPLE SURFACE

被引：34

作者：

SOBIESIERSKI, Z ^{[1
]}

WESTWOOD, DI ^{[1
]}

WOOLF, DA ^{[1
]}

FUKUI, T ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] UNIV WALES COLL CARDIFF,COLL CARDIFF,DEPT PHYS & ASTRON,CARDIFF CF2 3YB,WALES

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence (PL) measurements have been used to examine the influence which the proximity of the sample surface bears on the radiative recombination occurring within a near-surface quantum well (QW). The InxGa1-xAs/GaAs system exhibits dramatic attenuation in PL intensity for surface barriers below 75 angstrom in thickness, without any significant shift in PL peak energy. However, as the GaAs surface barrier is reduced to zero, both In0.26Ga0.74As/GaAs and In0.1Ga0.9As/GaAs QWs reveal the development of an additional PL feature at an energy which coincides with that expected for direct band-to-band recombination within the strained InxGa1-xAs layer. PL measurements for chemically etched Al0.3Ga0.7As/GaAs near-surface QWs also show a lack of shift in PL peak energy, as the outer layer is thinned gradually.

引用

页码：1723 / 1726

页数：4

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