INSITU SURFACE-STATE SPECTROSCOPY BY PHOTOLUMINESCENCE AND SURFACE CURRENT TRANSPORT FOR COMPOUND SEMICONDUCTORS

被引：43

作者：

SAITOH, T ^{[1
]}

IWADATE, H ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

PHOTOLUMINESCENCE; SURFACE STATE DENSITY; SURFACE STATE DISTRIBUTION; SURFACE RECOMBINATION; FERMI LEVEL PINNING; BAND BENDING; SULFUR TREATMENT; AU-DEPOSITION; INTERFACE CONTROL LAYER;

D O I：

10.1143/JJAP.30.3750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By a rigorous computer analysis of the surface recombination process, it is shown that the surface state distributions on semiconductor free surfaces can be determined from a measurement of the dependence of band-edge photoluminescence intensity on the excitation intensity. The measurement of the Fermi level pinning position in the dark by the surface current transport measurement avoids the possible ambiguity of the interpretation. The new technique is successfully applied to variously treated GaAs surfaces and to passivated InGaAs surfaces with and without the ultrathin Si interface control layer.

引用

页码：3750 / 3754

页数：5

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