PHOTOLUMINESCENCE AS A TOOL FOR STUDY OF ELECTRONIC SURFACE PROPERTIES OF GALLIUM-ARSENIDE

被引：111

作者：

METTLER, K ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LABS,D-8000 MUNCHEN,FED REP GER

来源：

APPLIED PHYSICS | 1977年 / 12卷 / 01期

关键词：

D O I：

10.1007/BF00900071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：75 / 82

页数：8

共 23 条

[1] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE [J].

ACKET, GA ;

NIJMAN, W ;

LAM, HT .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3033-3040

[2]

BONTSCHBRUJEWIT.WL, 1970, AUFGABENSAMMLUNG HAL, P113

[3] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257

[4] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[5] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

CASEY, HC ;

MILLER, BI ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287

[6]

FRANKL DR, 1967, ELECTRICAL PROPERTIE, P89

[7] TEMPERATURE-DEPENDENCE AND ILLUMINATION-DEPENDENCE OF WORK FUNCTION OF GALLIUM-ARSENIDE [J].

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1972, 30 (01) :185-&

[8] EFFECT OF SURFACE ELECTRIC FIELDS ON RADIATIVE RECOMBINATION IN CDS [J].

HETRICK, RE ;

YEUNG, KF .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2882-&

[9] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME OF BAND-TO-BAND RECOMBINATION IN HEAVILY DOPED N-TYPE GAAS [J].

HWANG, CJ .

PHYSICAL REVIEW B, 1972, 6 (04) :1355-&

[10] DEPENDENCE OF THRESHOLD AND ELECTRON LIFETIME ON ACCEPTOR CONCENTRATION IN GAAS-GA1-XALXAS LASERS [J].

HWANG, CJ ;

DYMENT, JC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3240-3244

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