UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES

被引：466

作者：

HASEGAWA, H

OHNO, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1130 / 1138

页数：9

共 57 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].

ANDREWS, JM ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59

[2]

[Anonymous], ELECTRONIC STRUCTURE

[3] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[4] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J].

BRUGGER, H ;

SCHAFFLER, F ;

ABSTREITER, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (02) :141-144

[5] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

CALDAS, MJ ;

FAZZIO, A ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673

[6] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS [J].

CHADI, DJ ;

COHEN, ML .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01) :405-419

[7] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[8] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[9] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J].

CLERJAUD, B .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19) :3615-3661

[10] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].

CRAFORD, MG ;

SHAW, RW ;

HERZOG, AH ;

GROVES, WO .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&

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