DEEP-LEVEL TRANSIENT SPECTROSCOPY OF ANISOTROPIC SEMICONDUCTOR GATE

Deep level transient spectroscopy (DLTS) was carried out on single crystals of the layered chalcogenide p-GaTe using Schottky barriers parallel and perpendicular to the layer planes to study the possible anisotropy of the defect levels. Deep levels with the same energies (0.28 eV and 0.42-0.45 eV) have been found in both directions with concentrations ranging from 10(13)cm(-3) to 10(14)cm(-3) and capture cross-sections from 10(-15)cm(2) to 10(-17)cm(2). The difference in the spectra obtained from the two planes and the possible reason for the deep level energies being independent of crystal orientation are discussed.